With the development of IGBT technology, IGBT has expanded from industrial to consumer electronics applications, becoming the fastest-growing power semiconductor device in the next 10 years; and in the Chinese market, rail transportation, home appliance energy saving, wind power generation, solar photovoltaic and power electronics applications It also detonated the IGBT application market. According to an upcoming report by IHS iSuppli's China Research Service, due to more emphasis on green energy and energy efficiency, as well as government investment support and strict energy policies, China's insulated gate bipolar transistors (IGBT) from 2011 to 2015 The compound annual growth rate of market sales will reach 13%. IGBT sales in 2011 will reach US $ 859 million, and in 2015 it is expected to reach US $ 1.3 billion, as shown in the figure below. Compared with other discrete power components such as other MOSFETs, China's IGBT sales have grown strongly.
IGBT products can be divided into IGBT modules and discrete devices. Due to the high power output, small size and reliability in terminal applications, IGBT modules are widely used in almost all electronics industries, from the consumer field to the industrial field. In 2010, modules accounted for 73% of total IGBT sales, reaching US $ 537 million. IGBT discrete components account for the remaining 27%. In 2010, overall IGBT sales reached US $ 710 million, a 65% increase from the US $ 430 million in 2009.
Challenges and gaps
Although the market space is huge, the current domestic IGBT market is still monopolized by foreign manufacturers such as Infineon and Mitsubishi. The sales director of Nanjing Yinmao Microelectronics estimates that more than 95% of the domestic IGBT market is imported products. Although foreign IGBT giants have some investment or joint ventures in China, they still implement a technical blockade on China in terms of IGBTs, so the true core technology has not flowed to China, which severely restricts the process of China's IGBT industrialization.
"Compared with foreign manufacturers, the main gap between domestic IGBTs is in device design, process and manufacturing technology, and solutions for the entire terminal application. In addition, the supply of IGBT raw materials will also affect the development of domestic IGBTs to a certain extent." Wu Zongxian, general manager of China Resources Shanghua Discrete Device Product Development Center, said pragmatically, he also said that although the domestic IGBT industry is developing faster, because of the wide gaps in various aspects, it will take 5-10 years to catch up with the international level .
Luo Yi, the general manager of Xi'an Xinpai, is more pessimistic. He believes that under the current situation, domestic IGBTs catch up with foreign standards is a fool's dream. He explained: "The current domestic IGBT industry can only be said to have just started, and the technology and process are basically both It is blank. On the one hand, the technology of IGBT is changing with each passing day, and the update is fast. It is difficult for domestic enterprises to keep up with the pace, let alone catch up. On the other hand, the core technology of IGBT has not been mastered in China. The packaging factory, without its own real brand, does not have its own brand to compete with others? "
In addition, the lack of industrialized technical experience and talents is also one of the difficulties facing the development of China's IGBT industry. Although some of the returnees have returned to China to start businesses, this situation has been improved to a certain extent, but most domestic universities and research institutions have The energy turned to the direction of SIC and GaN wide band gap semiconductor devices and power management chips. Only two or three universities and research institutions are still engaged in the research and development of IGBT devices, and are mainly limited to computer simulation research, which has led to China ’s IGBT design and research and development. Talents are scarce.
Cocoon growth
Because domestic companies have relatively little technology and accumulation in IGBT chip design, manufacturing, and packaging, it is not realistic to catch up with international standards in the short term. Therefore, improving the ability of imported substitute products has become the preferred direction for domestic companies, with price advantage To seize market share with local advantages, it is understood that the cost of IGBT localized devices is 15-20% lower than that of foreign companies. Even if the price is reduced by 40%, domestic companies still have a gross profit margin of more than 30%. In addition, the product positioning of foreign companies is mostly high-power IGBTs in industrial applications, and China is the world's leading home appliance production and consumer country. In addition, the low-power IGBT production threshold is larger and the power is lower. Therefore, domestic companies enter the IGBT industry home appliances The field is the most suitable entry point. "In the past 2-3 years, domestic IGBTs, especially 1200V flat non-punch-through and 1200V trench non-punch-through, have made breakthroughs in the consumer electronics market. It is expected that in the next 2-3 years, they will be at 600V and 1,700V or more There is a breakthrough in high-voltage technology. Medium and high-power applications will see domestic IGBT devices in the next 3-5 years. "According to Wu Zongxian, general manager of China Resources Shanghua discrete device product development center, he can see that his The development prospect is full of confidence.
The local market of smart grids, high-speed rail construction, new energy vehicles, and home appliance energy conservation has created a solid market foundation for companies to achieve technological breakthroughs and achieve IGBT replacement. In particular, energy saving and new energy are the focus of the country's development of emerging technology industries, and IGBT is the core device in the field of energy saving and new energy. Therefore, the industrialization of IGBT is not only a market demand, but also a strategic demand for national development. The National Development and Reform Commission issued a red-headed document on March 19, 2010: "Notice of the General Office of the National Development and Reform Commission on Organizing and Implementing the Special Project for the Industrialization of New Type Power Electronic Devices in 2010". Its special focus clearly defines the chips and devices represented by IGBT Design and development and industrialization, power module industrialization. This shows that the country has a deeper understanding and crisis awareness of the current status of the localization of power semiconductors.
The picture above is the current domestic IGBT enterprise distribution map
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