According to reports, German semiconductor manufacturer Azzurro demonstrated '1-bin' wavelength LED wafers, which can achieve consistent production values ​​of less than 3nm wavelength and achieve 1nm results in development. The company said the record-breaking 1nm success indicates that AZZURRO's technology is capable of making '1bin' silicon-based GaN LED wafers.
AZZURRO said that the brightness and efficiency of silicon-based GaN wafers can be solved, but the issue of production is still inconclusive. The large lattice mismatch and thermal expansion coefficient between gallium nitride and silicon cause a high warpage problem in the LED wafer during growth. This has an adverse effect on wavelength, forward voltage, and output power. AZZURRO overcomes these obstacles with its appropriate proprietary patented strain engineering and growth techniques.
AZZURRO's breakthrough results include: wavelength <3nm or 0.6%, forward voltage of 1.3% and output power of 3.9%, which greatly eliminates the binning process. At the same time, it also released ultra-high crystal quality 150nm diameter blue silicon-based GaN LED wafers. At the same time, the equally impressive 200mm LED wafers show the scalability of the company's technology.
Azzurro's latest production and development results clearly demonstrate that in addition to the cost advantages of lower cost substrates and LED chips made from standard silicon wafers, strain-based silicon-based GaN LED wafers can also help reduce binning.
The company's co-founder and CMO, Alexander Loesing, who is also the leader of the LED technology business unit, commented: "We are very proud of the team's 1.0nm achievements. These results prove our GaN-on-Si technology. Let the LED industry be closer to the goal of producing "1bin" LED wafers."
AZZURRO said that the brightness and efficiency of silicon-based GaN wafers can be solved, but the issue of production is still inconclusive. The large lattice mismatch and thermal expansion coefficient between gallium nitride and silicon cause a high warpage problem in the LED wafer during growth. This has an adverse effect on wavelength, forward voltage, and output power. AZZURRO overcomes these obstacles with its appropriate proprietary patented strain engineering and growth techniques.
AZZURRO's breakthrough results include: wavelength <3nm or 0.6%, forward voltage of 1.3% and output power of 3.9%, which greatly eliminates the binning process. At the same time, it also released ultra-high crystal quality 150nm diameter blue silicon-based GaN LED wafers. At the same time, the equally impressive 200mm LED wafers show the scalability of the company's technology.
Azzurro's latest production and development results clearly demonstrate that in addition to the cost advantages of lower cost substrates and LED chips made from standard silicon wafers, strain-based silicon-based GaN LED wafers can also help reduce binning.
The company's co-founder and CMO, Alexander Loesing, who is also the leader of the LED technology business unit, commented: "We are very proud of the team's 1.0nm achievements. These results prove our GaN-on-Si technology. Let the LED industry be closer to the goal of producing "1bin" LED wafers."
Shenzhen Kaixuanye Technology Co., Ltd. , https://www.icoilne.com