Vishay's TrenchFET Gen III P-Channel Power MOSFETs have very low on-resistance

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September 5, 2013 - Recently, Vishay Intertechnology, Inc. (NYSE ticker symbol: VSH) announced the expansion of its ultra-small PowerPAK SC-70 package TrenchFET Gen III P-channel power ^MOSFET??. The Vishay Siliconix MOSFET , introduced today, is designed to save space and increase efficiency in portable electronics with a footprint of only 2mm x 2mm and an on-resistance of -12V at -4.5V and -10V gate drive. The lowest of the 20V and -30V (12V VGS and 20V VGS) devices.

For load and battery switches in power management, as well as control switches in synchronous buck conversion applications for smartphones, tablets, mobile computing devices, hard drives and solid state drives, the -12 V SiA467EDJ offers 13m? (-4.5V) Very low on-resistance . The on-resistance of -20V SiA437DJ is 14.5m? (-4.5V), and the on-resistance of -30V SiA449DJ and SiA483DJ are only 20m? (-10V) and 21m? (-10V) respectively. In addition, the SiA437DJ and SiA467EDJ have a current rating of up to 30A and can withstand large inrush currents for load switches.

The device's low on-resistance allows designers to achieve lower voltage drops in their circuits, use power more efficiently, and extend battery life, while the ultra-small PowerPAK SC-70 package saves valuable board space in these devices. . For small point-of-load (POL) DC/DC and other synchronous buck applications, the MOSFET 's P-channel technology eliminates the need for level shifting circuits or "bootstrap" devices, simplifying gate drive design.

SiA467EDJ, SiA437DJ, SiA449DJ and SiA483DJ were tested for 100% Rg. These MOSFETs are compliant with the halogen-free regulations of JEDEC JS709A and are RoHS compliant 2011/65/EU.

Device specification sheet:

Samples and production quantities of the SiA467EDJ, SiA437DJ, SiA449DJ and SiA483DJ are available now, with lead times of 12 to 14 weeks for larger orders.