IGBT is a power device that combines the advantages of MOSFET and GTR

The following is a circuit diagram of [IGBT is a power device that combines the advantages of MOSFET and GTR]

IGBT is a power device that combines the advantages of MOSFET and GTR

Bipolar power devices: such as thyristors, GTRs, etc., have high current carrying capacity: due to the minority carrier injection modulation of the drift region conductivity, even for high voltage devices, the current density can reach 200 ~ 300A / cm2
The switching speed is lower, and the power consumption of the power MOSFET is higher during the switching process:
The switching speed is high, and the power consumption during the switching process is small. Since there is no conductivity modulation effect of a few carriers, the on-state resistance is large and the current carrying capacity is small. The maximum current density of a 600V power MOSFET is typically only about 10A/cm2.

Bipolar-MOS composite device technology uses bipolar-MOS composite device technology (referred to as BiMOS technology) to combine the two, taking the length of each party to form a new device.
Among them:
The role of bipolar devices: transporting the main current
The role of MOS devices: as a control switch
1, structure

(Editor: Circuit Diagram)