Cree announced two new GaN processes: 0.25 μm, G40V4 with a drain voltage of up to 40V, and G50V3 with a 0.4μm drain and a maximum drain voltage of 50V. New process technologies increase operating voltage and RF power density, enabling smaller die and more compact, higher efficiency amplifiers than traditional technologies. Both new technologies are compatible with Cree's proven GaN monolithic microwave integrated circuit (MMIC) technology and can be applied to 100 mm diameter silicon carbide wafers with a full range of passive circuit components and nonlinear models. .
New process technologies are now available for R&D and mass production. With these two latest technologies, Cree is able to offer a wide range of foundry services, including full and dedicated mask sets, to facilitate the rapid development of custom circuits. The G40V4 process can be performed in an environment with 28V and 40V operating voltages and an RF power density of 6W/mm at the outer edge of a field effect transistor (FET) below 18GHz. The G50V3 process can be performed in an RF power density of 8 W/mm at the outer edge of a field effect transistor (FET) operating at 50 V and 6 GHz. Both process technologies are based on the G28V3 process technology previously released by Cree. Since its inception in 2006, the 0.4 micron, 28V G28V3 process technology is one of the industry's lowest field failure microwave technologies (9 fault devices per billion hours).
Cree estimates that if GaN replaces traditional transistor technology in the installation of a typical three-band multi-band LTE/4G communication remote radio head (RRH), it can reduce RRH power consumption by up to 20%, thereby reducing operating costs and energy consumption. . In addition, the new process can reduce initial system costs. The high voltage and high efficiency of the GaN process can help reduce heat sink and case size, reduce the design complexity of wireless RF amplifiers, and reduce the cost of AC to DC and DC to DC converters. In addition, air now replaces the large fans previously required for system cooling. All of these improvements can save up to 10% in material costs and significantly reduce system acquisition costs.
Military radar systems can also achieve the same advantages. The high efficiency of the Cree GaN process reduces maintenance costs while reducing operating power, thus significantly optimizing system life cycle costs. The G40V4 and G50V3 processes have a working (channel) junction temperature of 225 ° C and an average lifetime of over 2 million hours (228 years), and their superior reliability significantly reduces the cost of repair and maintenance of the radar system over the life of the system.
Jim Milligan, Director of Radio Frequency (RF) and Microwaves at Cree, said: "Our customers need reliable and higher frequency processes to exploit the benefits of GaN and apply it to markets including satellite communications, radar and electronic warfare. In the 6GHz field, we believe that the new G40V4 process can meet the needs of customers. At the same time, in response to customers' demand for low-cost GaN solutions, Cree has introduced a G50V3 process with a working voltage of 50V, which enables excellent wireless performance. RF output power is cost-effective, accelerating GaN's popularity in cost-sensitive markets such as communications infrastructure, and GaN is now able to offer performance advantages unmatched by silicon LDMOS in these areas."
Dr. Cengiz Balkas, vice president and general manager of Cree Power and Radio Frequency (RF), said: "The higher operating voltage and higher efficiency of the new process are key to rapid adoption. If used on the upcoming LTE/4G macrocell base station GaN, communications operators can save more than $2 billion in energy costs each year. Fortunately, the communications industry has begun to realize these potential savings. Cree plans to provide more than 75 million watts of GaN transistors for communications base stations this year."
At 40V operating voltage and 18GHz, the Cree G40V4 process can deliver up to 6W/mm PSAT; at 10GHz, typical device characteristics can achieve 65% power added efficiency (PAE) and 12dB small signal gain. At 50V operating voltage and 6GHz, the G50V3 process can deliver up to 8W/mm PSAT; at 3.5GHz, typical device characteristics can achieve 70% power added efficiency (PAE) and 12dB small signal gain. Both GaN processes have a maximum operating channel temperature of 225oC and an average lifetime of more than two million (2E6) hours. In addition, Cree has released the MMIC Design Suite, which features Cree's patented scalable nonlinear HEMT model for Agilent's Advanced Design System (ADS) and AWR's Microwave Office simulation platform. The design kit also features a complete set of passive components including resistors, capacitors, spiral inductors and substrate base vias that can be used to simulate complete MMIC performance and significantly reduce design cycles.
For more information on new process technologies and processing services, please visit
New process technologies are now available for R&D and mass production. With these two latest technologies, Cree is able to offer a wide range of foundry services, including full and dedicated mask sets, to facilitate the rapid development of custom circuits. The G40V4 process can be performed in an environment with 28V and 40V operating voltages and an RF power density of 6W/mm at the outer edge of a field effect transistor (FET) below 18GHz. The G50V3 process can be performed in an RF power density of 8 W/mm at the outer edge of a field effect transistor (FET) operating at 50 V and 6 GHz. Both process technologies are based on the G28V3 process technology previously released by Cree. Since its inception in 2006, the 0.4 micron, 28V G28V3 process technology is one of the industry's lowest field failure microwave technologies (9 fault devices per billion hours).
Cree estimates that if GaN replaces traditional transistor technology in the installation of a typical three-band multi-band LTE/4G communication remote radio head (RRH), it can reduce RRH power consumption by up to 20%, thereby reducing operating costs and energy consumption. . In addition, the new process can reduce initial system costs. The high voltage and high efficiency of the GaN process can help reduce heat sink and case size, reduce the design complexity of wireless RF amplifiers, and reduce the cost of AC to DC and DC to DC converters. In addition, air now replaces the large fans previously required for system cooling. All of these improvements can save up to 10% in material costs and significantly reduce system acquisition costs.
Military radar systems can also achieve the same advantages. The high efficiency of the Cree GaN process reduces maintenance costs while reducing operating power, thus significantly optimizing system life cycle costs. The G40V4 and G50V3 processes have a working (channel) junction temperature of 225 ° C and an average lifetime of over 2 million hours (228 years), and their superior reliability significantly reduces the cost of repair and maintenance of the radar system over the life of the system.
Jim Milligan, Director of Radio Frequency (RF) and Microwaves at Cree, said: "Our customers need reliable and higher frequency processes to exploit the benefits of GaN and apply it to markets including satellite communications, radar and electronic warfare. In the 6GHz field, we believe that the new G40V4 process can meet the needs of customers. At the same time, in response to customers' demand for low-cost GaN solutions, Cree has introduced a G50V3 process with a working voltage of 50V, which enables excellent wireless performance. RF output power is cost-effective, accelerating GaN's popularity in cost-sensitive markets such as communications infrastructure, and GaN is now able to offer performance advantages unmatched by silicon LDMOS in these areas."
Dr. Cengiz Balkas, vice president and general manager of Cree Power and Radio Frequency (RF), said: "The higher operating voltage and higher efficiency of the new process are key to rapid adoption. If used on the upcoming LTE/4G macrocell base station GaN, communications operators can save more than $2 billion in energy costs each year. Fortunately, the communications industry has begun to realize these potential savings. Cree plans to provide more than 75 million watts of GaN transistors for communications base stations this year."
At 40V operating voltage and 18GHz, the Cree G40V4 process can deliver up to 6W/mm PSAT; at 10GHz, typical device characteristics can achieve 65% power added efficiency (PAE) and 12dB small signal gain. At 50V operating voltage and 6GHz, the G50V3 process can deliver up to 8W/mm PSAT; at 3.5GHz, typical device characteristics can achieve 70% power added efficiency (PAE) and 12dB small signal gain. Both GaN processes have a maximum operating channel temperature of 225oC and an average lifetime of more than two million (2E6) hours. In addition, Cree has released the MMIC Design Suite, which features Cree's patented scalable nonlinear HEMT model for Agilent's Advanced Design System (ADS) and AWR's Microwave Office simulation platform. The design kit also features a complete set of passive components including resistors, capacitors, spiral inductors and substrate base vias that can be used to simulate complete MMIC performance and significantly reduce design cycles.
For more information on new process technologies and processing services, please visit
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